"Times New Roman";background:white;mso-ansi-language:EN-GB">Soluble in aqua regia and hot alkali solution, non-dissolvable in water, hydrochloric acid and nitric acid. Can also be dissolved when reacting with ammonium sulfide.

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"Times New Roman";background:white;mso-ansi-language:EN-GB">Tin disulfide is a kind of type semiconductor material with a Cdl2 hexagonal crystal structure layer, broadband gap is about 2.35eV.

"Times New Roman";background:white;mso-ansi-language:EN-GB">Its wider broadband gap gives it excellent optical and electrical properties.

"Times New Roman";background:white;mso-ansi-language:EN-GB">It can be used as holographic record and electric conversion system material, solar cell material and lithium battery anode materials, etc. Because tin disulfide has a similar energy gap width to silicon, its safety and environment absorption coefficient is also very high. Therefore it is very suitable for the absorbing layer of solar cells. In recent years this material has become a research focus for experts at home and abroad. Also available for counterfeiting gold-plating and making pigments.

Purity:?98% - 99.5%

12138-09-9